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TDA2006
12W AUDIO AMPLIFIER
DESCRIPTION The TDA2006 is a monolithic integrated circuit in Pentawatt package, intended for use as a low frequency class "AB" amplifier. At 12V, d = 10 % typically it provides 12W output power on a 4 load and 8W on a 8 . The TDA2006 provides high output current and has very low harmonic and cross-over distortion. Further the device incorporates an original (and patented)short circuit protection system comprising an arrangement for automatically limiting the dissipated power so as to keep the working point of the output transistors within their safe operating area. A conventional thermal shutdown system is also included. The TDA2006 is pin to pin equivalent to the TDA2030.
PENTAWATT ORDERING NUMBERS : TDA2006V TDA2006H
TYPICAL APPLICATION CIRCUIT
May 1995
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SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Vs Vi Vi Io Ptot Tstg, Tj Supply Voltage Input Voltage Differential Input Voltage Output Peak Current (internaly limited) Power Dissipation at Tcase = 90 C Storage and Junction Temperature Parameter Value 15 Vs 12 3 20 - 40 to 150 V A W C Unit V
THERMAL DATA
Symbol R th (j-c) Parameter Thermal Resistance Junction-case Max Value 3 Unit C/W
PIN CONNECTION
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ELECTRICAL CHARACTERISTICS (refer to the test circuit ; VS = 12V, Tamb = 25oC unless otherwise specified)
Symbol Vs Id Ib VOS IOS VOS Po Parameter Supply Voltage Quiescent Drain Current Input Bias Current Input Offset Voltage Input Offset Current Output Offset Voltage Output Power Vs = 15V Vs = 15V Vs = 15V Vs = 15V Vs = 15V d = 10%, f = 1kHz RL = 4 RL = 8 Po = 0.1 to 8W, RL = 4, f = 1kHz Po = 0.1 to 4W, RL = 8, f = 1kHz Po = 10W, R L = 4, f = 1kHz Po = 6W, RL = 8, f = 1kHz Po = 8W, RL = 4 f = 1kHz f = 1kHz f = 1kHz B (- 3dB) = 22Hz to 22kHz, RL = 4 B (- 3dB) = 22Hz to 22kHz, RL = 4 R L = 4, Rg = 22k, fripple = 100Hz (*) Po = 12W, R L = 4 Po = 8W, RL = 8 40 29.5 0.5 Test Conditions Min. 6 40 0.2 8 80 10 100 12 8 0.2 0.1 200 220 20Hz to 100kHz 5 75 30 3 80 50 850 500 145 30.5 10 200 M dB dB V pA dB mA mA C % % mV mV Typ. Max. 15 80 3 Unit V mA A mV nA mV W 6
d Vi B Ri Gv Gv eN iN SVR Id Tj
Distortion Input Sensitivity Frequency Response (- 3dB) Input Resistance (pin 1) Voltage Gain (open loop) Voltage Gain (closed loop) Input Noise Voltage Input Noise Current Supply Voltage Rejection Drain Current Thermal Shutdown Junction Temperature
(*) Referring to Figure 15, single supply.
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Figure 1 : Output Power versus Supply Voltage Figure 2 : Distortion versus Output Power
Figure 3 :
Distortion versus Frequency
Figure 4 :
Distortion versus Frequency
Figure 5 :
Sensitivity versus Output Power
Figure 6 :
Sensitivity versus Output Power
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Figure 7 : Frequency Response with different values of the rolloff Capacitor C8 (see Figure 13) Figure 8 : Value of C8 versus Voltage Gain for different Bandwidths (see Figure 13)
Figure 9 :
Quiescent Current versus Supply Voltage
Figure 10 : Supply Voltage Rejection versus Voltage Gain
Figure 11 : Power Dissipation and Efficiency versus Output Power
Figure 12 : Maximum Power Dissipation versus Supply Voltage (sine wave operation)
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Figure 13 : Application Circuit with Spilt Power Supply
Figure 14 : P.C. Board and Components Layout of the Circuit of Figure 13 (1:1 scale)
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Figure 15 : Application Circuit with Single Power Supply
Figure 16 : P.C. Board and Components Layout of the Circuit of Figure 15 (1:1 scale)
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Figure 17 : Bridge Amplifier Configuration with Split Power Supply (PO = 24W, VS = 12V)
PRACTICAL CONSIDERATIONS Printed Circuit Board The layout shown in Figure 14 should be adopted by the designers. If different layout are used, the ground points of input 1 and input 2 must be well decoupled from ground of the output on which a rather high current flows. Assembly Suggestion No electrical isolation is needed between the packTable 1
Component R1 R2 R3 R4 R5 C1 C2 C 3C4 C 5C6 C7 C8 D 1D2 Recommanded Value 22 k 680 22 k 1 3 R2 2.2 F 22 F 0.1 F 100 F 0.22 F 1 Purpose Closed Loop Gain Setting Closed Loop Gain Setting Non Inverting Input Biasing Frequency Stability Larger Than Recommanded Value Increase of Gain Decrease of Gain (*) Increase of Input Impedance Danger of Oscillation at High Frequencies with Inductive Loads Poor High Frequencies Attenuation Smaller Than Recommanded Value Decrease of Gain (*) Increase of Gain Decrease of Input Impedance
age and the heat-sink with single supply voltage configuration. Application Suggestion The recommended values of the components are the ones shown on application circuits of Figure 13. Different values can be used. The table 1 can help the designers.
Upper Frequency Cut-off Input DC Decoupling Inverting Input DC Decoupling Supply Voltage by Pass Supply Voltage by Pass Frequency Stability Upper Frequency Cut-off
Danger of Oscillation Increase of Low Frequencies Cut-off Increase of Low Frequencies Cut-off Danger of Oscillation Danger of Oscillation Danger of Oscillation
2BR1
1N4001
Lower Bandwidth
Larger Bandwidth
To Protect the Device Against Output Voltage Spikes.
(*) Closed loop gain must be higher than 24dB.
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SHORT CIRCUIT PROTECTION The TDA2006 has an original circuit which limits the current of the output transistors. Figure 18 shows that the maximum output current is a function of the collector emitter voltage ; hence the output transistors work within their safe operating area (Figure 19). This function can therefore be considered as being peak power limiting rather than simple current limiting. It reduces the possibility that the device gets damaged during an accidental short circuit from AC output to ground. Figure 19 : Safe Operating Area and Collector Characteristics of the Protected Power Transistor
THERMAL SHUT DOWN The presence of a thermal limiting circuit offers the following advantages : 1) an overload on the output (even if it is permanent), or an abo ve limit ambien t temperature can be easily supported since the Tj cannot be higher than 150C. 2) the heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no possibility of device damage due to high junction temperature. If for any reason, the junction temperature increases up to 150 C, the thermal shutdown simply reduces the power dissipation and the current consumption. The maximum allowable power dissipation depends upon the size of the external heatsink (i.e. its thermal resistance) ; Figure 22 shows the dissipable power as a function of ambient temperature for different thermal resistances. Figure 18 : Maximum Output Current versus Voltage VCE (sat) accross each Output Transistor Figure 21 : Output Power and Drain Current versus Case Temlperature (RL = 8) Figure 20 : Output Power and Drain Current versus Case Temlperature (RL = 4)
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Figure 22 : Maximum Allowable Power Dissipation versus Ambient Temperature DIMENSION SUGGESTION The followingtable shows the length of the heatsink in Figure 23 for several values of Ptot and R th.
Ptot (W) Lenght of Heatsink (mm) R th of Heatsink (C/W) 12 60 4.2 8 40 6.2 6 30 8.3
Figure 23 : Example of Heatsink
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PENTAWATT PACKAGE MECHANICAL DATA
DIM. A C D D1 E F F1 G G1 H2 H3 L L1 L2 L3 L5 L6 L7 M M1 Dia MIN. mm TYP. MAX. 4.8 1.37 2.8 1.35 0.55 1.05 1.4 MIN. inch TYP. MAX. 0.189 0.054 0.110 0.053 0.022 0.041 0.055 0.142 0.276 0.409 0.409
2.4 1.2 0.35 0.8 1 3.4 6.8 10.05 17.85 15.75 21.4 22.5 2.6 15.1 6 4.5 4 3.65
0.094 0.047 0.014 0.031 0.039 0.126 0.260 0.396
0.134 0.268
10.4 10.4
0.703 0.620 0.843 0.886 3 15.8 6.6 0.102 0.594 0.236 0.177 0.157 3.85 0.144 0.152 0.118 0.622 0.260
L E L1 M1 A C D1 L2 L5 L3 D Dia. F L6 H2 L7 F1 G G1 H3 M
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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - All Rights Reserved PENTAWATT (R) is Registered Trademark of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A.
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